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STMicroelectronics · Discrete semiconductors

STI11NM60ND

MOSFET N-CH 600V 10A I2PAK

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STI11NM60ND component illustration
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STI11NM60ND specifications

Recorded source facts. Missing values are kept explicit; verify the exact manufacturer document before design approval.

ManufacturerSTMicroelectronics
Ordering codeSTI11NM60ND
FamilyDiscrete semiconductors
PackageTO-262-3 Long Leads, I²Pak, TO-262AA
Product StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600 V
Current - Continuous Drain (Id) @ 25°C10A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs450mOhm @ 5A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs30 nC @ 10 V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds850 pF @ 50 V
FET FeatureNot provided in source
Power Dissipation (Max)90W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI2PAK
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA

Documents and evidence

STI11NM60ND ↗

Catalog sources

www.ic-components.com · STI11NM60ND ↗

Source directory identity match; source detail pending. Specifications remain from existing catalog.

Before sourcing STI11NM60ND

  1. Identify the firmware and board baseline
  2. Check flash, RAM and required peripherals
  3. Review pin assignment and supply limits
  4. Keep the full temperature and package suffix
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