STMicroelectronics · Discrete semiconductors
STI11NM80
MOSFET N-CH 800V 11A I2PAK
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STI11NM80 specifications
Recorded source facts. Missing values are kept explicit; verify the exact manufacturer document before design approval.
| Manufacturer | STMicroelectronics |
|---|---|
| Ordering code | STI11NM80 |
| Family | Discrete semiconductors |
| Package | TO-262-3 Long Leads, I²Pak, TO-262AA |
| Product Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 800 V |
| Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 400mOhm @ 5.5A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 43.6 nC @ 10 V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 1630 pF @ 25 V |
| FET Feature | Not provided in source |
| Power Dissipation (Max) | 150W (Tc) |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | I2PAK (TO-262) |
| Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
Documents and evidence
STI11NM80 ↗Before sourcing STI11NM80
- Identify the firmware and board baseline
- Check flash, RAM and required peripherals
- Review pin assignment and supply limits
- Keep the full temperature and package suffix
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