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STMicroelectronics · Discrete semiconductors

STI260N6F6

MOSFET N-CH 75V 120A I2PAK

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STI260N6F6 component illustration
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STI260N6F6 specifications

Recorded source facts. Missing values are kept explicit; verify the exact manufacturer document before design approval.

ManufacturerSTMicroelectronics
Ordering codeSTI260N6F6
FamilyDiscrete semiconductors
PackageTO-262-3 Long Leads, I²Pak, TO-262AA
Product StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)75 V
Current - Continuous Drain (Id) @ 25°C120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs3mOhm @ 60A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs183 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds11400 pF @ 25 V
FET FeatureNot provided in source
Power Dissipation (Max)300W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI2PAK
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA

Documents and evidence

STI260N6F6 ↗

Catalog sources

www.ic-components.com · STI260N6F6 ↗

Source directory identity match; source detail pending. Specifications remain from existing catalog.

Before sourcing STI260N6F6

  1. Identify the firmware and board baseline
  2. Check flash, RAM and required peripherals
  3. Review pin assignment and supply limits
  4. Keep the full temperature and package suffix
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