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STMicroelectronics · Discrete semiconductors

STL24N60M2

MOSFET N-CH 600V 18A PWRFLAT HV

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STL24N60M2 component illustration
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STL24N60M2 specifications

Recorded source facts. Missing values are kept explicit; verify the exact manufacturer document before design approval.

ManufacturerSTMicroelectronics
Ordering codeSTL24N60M2
FamilyDiscrete semiconductors
Package8-PowerVDFN
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600 V
Current - Continuous Drain (Id) @ 25°C18A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs210mOhm @ 9A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs29 nC @ 10 V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds1060 pF @ 100 V
FET FeatureNot provided in source
Power Dissipation (Max)125W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerFlat™ (8x8) HV
Package / Case8-PowerVDFN

Documents and evidence

STL24N60M2 ↗

Catalog sources

www.ic-components.com · STL24N60M2 ↗

Source directory identity match; source detail pending. Specifications remain from existing catalog.

Before sourcing STL24N60M2

  1. Identify the firmware and board baseline
  2. Check flash, RAM and required peripherals
  3. Review pin assignment and supply limits
  4. Keep the full temperature and package suffix
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