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STMicroelectronics · Discrete semiconductors

STL26N30M8

MOSFET N-CH 300V 23A POWERFLAT

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STL26N30M8 component illustration
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STL26N30M8 specifications

Recorded source facts. Missing values are kept explicit; verify the exact manufacturer document before design approval.

ManufacturerSTMicroelectronics
Ordering codeSTL26N30M8
FamilyDiscrete semiconductors
Package8-PowerVDFN
Product StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)300 V
Current - Continuous Drain (Id) @ 25°C23A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs89mOhm @ 11.5A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs30.8 nC @ 10 V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds1430 pF @ 100 V
FET FeatureNot provided in source
Power Dissipation (Max)114W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerFlat™ (5x6)
Package / Case8-PowerVDFN

Documents and evidence

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Catalog sources

www.ic-components.com · STL26N30M8 ↗

Source directory identity match; source detail pending. Specifications remain from existing catalog.

Before sourcing STL26N30M8

  1. Identify the firmware and board baseline
  2. Check flash, RAM and required peripherals
  3. Review pin assignment and supply limits
  4. Keep the full temperature and package suffix
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