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STMicroelectronics · Discrete semiconductors

STL4P2UH7

MOSFET P-CH 20V 4A POWERFLAT

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STL4P2UH7 component illustration
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STL4P2UH7 specifications

Recorded source facts. Missing values are kept explicit; verify the exact manufacturer document before design approval.

ManufacturerSTMicroelectronics
Ordering codeSTL4P2UH7
FamilyDiscrete semiconductors
Package6-PowerWDFN
Product StatusObsolete
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20 V
Current - Continuous Drain (Id) @ 25°C4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Rds On (Max) @ Id, Vgs100mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs4.8 nC @ 4.5 V
Vgs (Max)±8V
Input Capacitance (Ciss) (Max) @ Vds510 pF @ 10 V
FET FeatureNot provided in source
Power Dissipation (Max)2.4W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerFlat™ (2x2)
Package / Case6-PowerWDFN

Documents and evidence

STL4P2UH7 ↗

Catalog sources

www.ic-components.com · STL4P2UH7 ↗

Source directory identity match; source detail pending. Specifications remain from existing catalog.

Before sourcing STL4P2UH7

  1. Identify the firmware and board baseline
  2. Check flash, RAM and required peripherals
  3. Review pin assignment and supply limits
  4. Keep the full temperature and package suffix
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