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STMicroelectronics · Discrete semiconductors

STLD257N4F7AG

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STLD257N4F7AG specifications

Recorded source facts. Missing values are kept explicit; verify the exact manufacturer document before design approval.

ManufacturerSTMicroelectronics
Ordering codeSTLD257N4F7AG
FamilyDiscrete semiconductors
Package8-PowerWDFN
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40 V
Current - Continuous Drain (Id) @ 25°C120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)6.5V, 10V
Rds On (Max) @ Id, Vgs1.1mOhm @ 60A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs66.5 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds5400 pF @ 25 V
FET FeatureNot provided in source
Power Dissipation (Max)158W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerFlat™ (5x6) Dual Side
Package / Case8-PowerWDFN

Documents and evidence

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Catalog sources

www.ic-components.com · STLD257N4F7AG ↗

Source directory identity match; source detail pending. Specifications remain from existing catalog.

Before sourcing STLD257N4F7AG

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  2. Check flash, RAM and required peripherals
  3. Review pin assignment and supply limits
  4. Keep the full temperature and package suffix
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