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STMicroelectronics · Discrete semiconductors

STN5PF02V

MOSFET P-CH 20V 4.2A SOT223

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STN5PF02V component illustration
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STN5PF02V specifications

Recorded source facts. Missing values are kept explicit; verify the exact manufacturer document before design approval.

ManufacturerSTMicroelectronics
Ordering codeSTN5PF02V
FamilyDiscrete semiconductors
PackageTO-261-4, TO-261AA
Product StatusObsolete
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20 V
Current - Continuous Drain (Id) @ 25°C4.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Rds On (Max) @ Id, Vgs80mOhm @ 2.1A, 4.5V
Vgs(th) (Max) @ Id450mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs6 nC @ 2.5 V
Vgs (Max)±8V
Input Capacitance (Ciss) (Max) @ Vds412 pF @ 15 V
FET FeatureNot provided in source
Power Dissipation (Max)2.5W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSOT-223
Package / CaseTO-261-4, TO-261AA

Documents and evidence

STN5PF02V ↗

Catalog sources

www.ic-components.com · STN5PF02V ↗

Source directory identity match; source detail pending. Specifications remain from existing catalog.

Before sourcing STN5PF02V

  1. Identify the firmware and board baseline
  2. Check flash, RAM and required peripherals
  3. Review pin assignment and supply limits
  4. Keep the full temperature and package suffix
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