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STMicroelectronics · Discrete semiconductors

STO65N60DM6

N-CHANNEL 600 V, 67 MOHM TYP., 4

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STO65N60DM6 component illustration
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STO65N60DM6 specifications

Recorded source facts. Missing values are kept explicit; verify the exact manufacturer document before design approval.

ManufacturerSTMicroelectronics
Ordering codeSTO65N60DM6
FamilyDiscrete semiconductors
Package8-PowerSFN
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600 V
Current - Continuous Drain (Id) @ 25°C46A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs76mOhm @ 23A, 10V
Vgs(th) (Max) @ Id4.75V @ 250µA
Gate Charge (Qg) (Max) @ Vgs65.2 nC @ 10 V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds2500 pF @ 100 V
FET FeatureNot provided in source
Power Dissipation (Max)320W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTOLL (HV)
Package / Case8-PowerSFN

Documents and evidence

STO65N60DM6 ↗

Before sourcing STO65N60DM6

  1. Identify the firmware and board baseline
  2. Check flash, RAM and required peripherals
  3. Review pin assignment and supply limits
  4. Keep the full temperature and package suffix
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