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STMicroelectronics · Discrete semiconductors

STP180N4F6

MOSFET N-CHANNEL 40V 120A TO220

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STP180N4F6 component illustration
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STP180N4F6 specifications

Recorded source facts. Missing values are kept explicit; verify the exact manufacturer document before design approval.

ManufacturerSTMicroelectronics
Ordering codeSTP180N4F6
FamilyDiscrete semiconductors
PackageTO-220-3
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40 V
Current - Continuous Drain (Id) @ 25°C120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, VgsNot provided in source
Vgs(th) (Max) @ IdNot provided in source
Gate Charge (Qg) (Max) @ VgsNot provided in source
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ VdsNot provided in source
FET FeatureNot provided in source
Power Dissipation (Max)190W (Tc)
Operating TemperatureNot provided in source
Mounting TypeThrough Hole
Supplier Device PackageTO-220
Package / CaseTO-220-3

Documents and evidence

STP180N4F6 ↗

Catalog sources

www.ic-components.com · STP180N4F6 ↗

Source directory identity match; source detail pending. Specifications remain from existing catalog.

Before sourcing STP180N4F6

  1. Identify the firmware and board baseline
  2. Check flash, RAM and required peripherals
  3. Review pin assignment and supply limits
  4. Keep the full temperature and package suffix
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