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STMicroelectronics · Discrete semiconductors

STP185N55F3

MOSFET N-CH 55V 120A TO220AB

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STP185N55F3 component illustration
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STP185N55F3 specifications

Recorded source facts. Missing values are kept explicit; verify the exact manufacturer document before design approval.

ManufacturerSTMicroelectronics
Ordering codeSTP185N55F3
FamilyDiscrete semiconductors
PackageTO-220-3
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)55 V
Current - Continuous Drain (Id) @ 25°C120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs3.8mOhm @ 60A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs100 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds6800 pF @ 25 V
FET FeatureNot provided in source
Power Dissipation (Max)330W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220
Package / CaseTO-220-3

Documents and evidence

STP185N55F3 ↗

Catalog sources

www.ic-components.com · STP185N55F3 ↗

Source directory identity match; source detail pending. Specifications remain from existing catalog.

Before sourcing STP185N55F3

  1. Identify the firmware and board baseline
  2. Check flash, RAM and required peripherals
  3. Review pin assignment and supply limits
  4. Keep the full temperature and package suffix
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