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STMicroelectronics · Discrete semiconductors

STP190N55LF3

MOSFET N-CH 55V 120A TO220-3

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STP190N55LF3 component illustration
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STP190N55LF3 specifications

Recorded source facts. Missing values are kept explicit; verify the exact manufacturer document before design approval.

ManufacturerSTMicroelectronics
Ordering codeSTP190N55LF3
FamilyDiscrete semiconductors
PackageTO-220-3
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)55 V
Current - Continuous Drain (Id) @ 25°C120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)5V, 10V
Rds On (Max) @ Id, Vgs3.7mOhm @ 30A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs80 nC @ 5 V
Vgs (Max)±18V
Input Capacitance (Ciss) (Max) @ Vds6200 pF @ 25 V
FET FeatureNot provided in source
Power Dissipation (Max)312W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220
Package / CaseTO-220-3

Documents and evidence

STP190N55LF3 ↗

Catalog sources

www.ic-components.com · STP190N55LF3 ↗

Source directory identity match; source detail pending. Specifications remain from existing catalog.

Before sourcing STP190N55LF3

  1. Identify the firmware and board baseline
  2. Check flash, RAM and required peripherals
  3. Review pin assignment and supply limits
  4. Keep the full temperature and package suffix
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