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STMicroelectronics · Discrete semiconductors

STP19NM50N

MOSFET N-CH 500V 14A TO220AB

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STP19NM50N component illustration
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STP19NM50N specifications

Recorded source facts. Missing values are kept explicit; verify the exact manufacturer document before design approval.

ManufacturerSTMicroelectronics
Ordering codeSTP19NM50N
FamilyDiscrete semiconductors
PackageTO-220-3
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)500 V
Current - Continuous Drain (Id) @ 25°C14A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs250mOhm @ 7A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs34 nC @ 10 V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds1000 pF @ 50 V
FET FeatureNot provided in source
Power Dissipation (Max)110W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220
Package / CaseTO-220-3

Documents and evidence

STP19NM50N ↗

Catalog sources

www.ic-components.com · STP19NM50N ↗

Source directory identity match; source detail pending. Specifications remain from existing catalog.

Before sourcing STP19NM50N

  1. Identify the firmware and board baseline
  2. Check flash, RAM and required peripherals
  3. Review pin assignment and supply limits
  4. Keep the full temperature and package suffix
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