STMicroelectronics · Discrete semiconductors
STP30N65DM6AG
DISCRETE
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STP30N65DM6AG specifications
Recorded source facts. Missing values are kept explicit; verify the exact manufacturer document before design approval.
| Manufacturer | STMicroelectronics |
|---|---|
| Ordering code | STP30N65DM6AG |
| Family | Discrete semiconductors |
| Package | TO-220-3 |
| Product Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain (Id) @ 25°C | 28A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 115mOhm @ 10A, 10V |
| Vgs(th) (Max) @ Id | 4.75V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 46 nC @ 10 V |
| Vgs (Max) | ±25V |
| Input Capacitance (Ciss) (Max) @ Vds | 2000 pF @ 100 V |
| FET Feature | Not provided in source |
| Power Dissipation (Max) | 223W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220 |
| Package / Case | TO-220-3 |
Documents and evidence
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