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STMicroelectronics · Discrete semiconductors

STP60NF10

MOSFET N-CH 100V 80A TO220AB

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STP60NF10 component illustration
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STP60NF10 specifications

Recorded source facts. Missing values are kept explicit; verify the exact manufacturer document before design approval.

ManufacturerSTMicroelectronics
Ordering codeSTP60NF10
FamilyDiscrete semiconductors
PackageTO-220-3
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Current - Continuous Drain (Id) @ 25°C80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs23mOhm @ 40A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs104 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds4270 pF @ 25 V
FET FeatureNot provided in source
Power Dissipation (Max)300W (Tc)
Operating TemperatureNot provided in source
Mounting TypeThrough Hole
Supplier Device PackageTO-220
Package / CaseTO-220-3

Documents and evidence

STP60NF10 ↗

Catalog sources

www.ic-components.com · STP60NF10 ↗

Source directory identity match; source detail pending. Specifications remain from existing catalog.

Before sourcing STP60NF10

  1. Identify the firmware and board baseline
  2. Check flash, RAM and required peripherals
  3. Review pin assignment and supply limits
  4. Keep the full temperature and package suffix
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