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STMicroelectronics · Discrete semiconductors

STP7NM80

MOSFET N-CH 800V 6.5A TO220-3

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STP7NM80 component illustration
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STP7NM80 specifications

Recorded source facts. Missing values are kept explicit; verify the exact manufacturer document before design approval.

ManufacturerSTMicroelectronics
Ordering codeSTP7NM80
FamilyDiscrete semiconductors
PackageTO-220-3
Product StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)800 V
Current - Continuous Drain (Id) @ 25°C6.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs1.05Ohm @ 3.25A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs18 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds620 pF @ 25 V
FET FeatureNot provided in source
Power Dissipation (Max)90W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220
Package / CaseTO-220-3

Documents and evidence

STP7NM80 ↗

Catalog sources

www.ic-components.com · STP7NM80 ↗

Source directory identity match; source detail pending. Specifications remain from existing catalog.

Before sourcing STP7NM80

  1. Identify the firmware and board baseline
  2. Check flash, RAM and required peripherals
  3. Review pin assignment and supply limits
  4. Keep the full temperature and package suffix
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Questions about STP7NM80

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