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STMicroelectronics · Discrete semiconductors

STP9NK65Z

MOSFET N-CH 650V 6.4A TO220AB

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STP9NK65Z component illustration
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STP9NK65Z specifications

Recorded source facts. Missing values are kept explicit; verify the exact manufacturer document before design approval.

ManufacturerSTMicroelectronics
Ordering codeSTP9NK65Z
FamilyDiscrete semiconductors
PackageTO-220-3
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25°C6.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs1.2Ohm @ 3.2A, 10V
Vgs(th) (Max) @ Id4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs41 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds1145 pF @ 25 V
FET FeatureNot provided in source
Power Dissipation (Max)125W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220
Package / CaseTO-220-3

Documents and evidence

STP9NK65Z ↗

Catalog sources

www.ic-components.com · STP9NK65Z ↗

Source directory identity match; source detail pending. Specifications remain from existing catalog.

Before sourcing STP9NK65Z

  1. Identify the firmware and board baseline
  2. Check flash, RAM and required peripherals
  3. Review pin assignment and supply limits
  4. Keep the full temperature and package suffix
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