STMicroelectronics · Discrete semiconductors

STPSC10065GY-TR

Name: STPSC10065GY-TR
Brand: STMicroelectronics

DIODE SIL CARBIDE 650V 10A D2PAK

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STPSC10065GY-TR specifications

Recorded source facts. Missing values are kept explicit; verify the exact manufacturer document before design approval.

Manufacturer	STMicroelectronics
Ordering code	STPSC10065GY-TR
Family	Discrete semiconductors
Package	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Product Status	Active
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)	650 V
Current - Average Rectified (Io)	10A
Voltage - Forward (Vf) (Max) @ If	1.45 V @ 10 A
Speed	No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)	0 ns
Current - Reverse Leakage @ Vr	130 µA @ 650 V
Capacitance @ Vr, F	670pF @ 0V, 1MHz
Mounting Type	Surface Mount
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package	D²PAK
Operating Temperature - Junction	-40°C ~ 175°C

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STPSC10065GY-TR ↗

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