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STMicroelectronics · Discrete semiconductors

STPSC20065DI

DIODE SIC 650V 20A TO220AC INS

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STPSC20065DI component illustration
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STPSC20065DI specifications

Recorded source facts. Missing values are kept explicit; verify the exact manufacturer document before design approval.

ManufacturerSTMicroelectronics
Ordering codeSTPSC20065DI
FamilyDiscrete semiconductors
PackageTO-220-2 Insulated, TO-220AC
Product StatusActive
TechnologySiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)650 V
Current - Average Rectified (Io)20A
Voltage - Forward (Vf) (Max) @ If1.45 V @ 20 A
SpeedNo Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)0 ns
Current - Reverse Leakage @ Vr300 µA @ 650 V
Capacitance @ Vr, F1250pF @ 0V, 1MHz
Mounting TypeThrough Hole
Package / CaseTO-220-2 Insulated, TO-220AC
Supplier Device PackageTO-220AC ins
Operating Temperature - Junction-40°C ~ 175°C

Documents and evidence

STPSC20065DI ↗

Before sourcing STPSC20065DI

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  2. Check flash, RAM and required peripherals
  3. Review pin assignment and supply limits
  4. Keep the full temperature and package suffix
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