STMicroelectronics · Discrete semiconductors
STPSC20G12WL
1200 V, 20 A HIGH SURGE SILICON
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STPSC20G12WL specifications
Recorded source facts. Missing values are kept explicit; verify the exact manufacturer document before design approval.
| Manufacturer | STMicroelectronics |
|---|---|
| Ordering code | STPSC20G12WL |
| Family | Discrete semiconductors |
| Package | TO-247-2 |
| Product Status | Active |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Current - Average Rectified (Io) | 20A |
| Voltage - Forward (Vf) (Max) @ If | 1.5 V @ 20 A |
| Speed | Fast Recovery = 200mA (Io) |
| Reverse Recovery Time (trr) | Not provided in source |
| Current - Reverse Leakage @ Vr | 150 µA @ 1200 V |
| Capacitance @ Vr, F | 1548pF @ 0V, 1MHz |
| Mounting Type | Through Hole |
| Package / Case | TO-247-2 |
| Supplier Device Package | DO-247 LL |
| Operating Temperature - Junction | -55°C ~ 175°C |
Documents and evidence
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