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STMicroelectronics · Discrete semiconductors

STPSC2H12B2Y-TR

DIODE SIL CARBIDE 1.2KV 5A DPAK

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STPSC2H12B2Y-TR component illustration
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STPSC2H12B2Y-TR specifications

Recorded source facts. Missing values are kept explicit; verify the exact manufacturer document before design approval.

ManufacturerSTMicroelectronics
Ordering codeSTPSC2H12B2Y-TR
FamilyDiscrete semiconductors
PackageTO-252-3, DPak (2 Leads + Tab), SC-63
Product StatusActive
TechnologySiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)1200 V
Current - Average Rectified (Io)5A
Voltage - Forward (Vf) (Max) @ If1.5 V @ 2 A
SpeedFast Recovery = 200mA (Io)
Reverse Recovery Time (trr)Not provided in source
Current - Reverse Leakage @ Vr12 µA @ 1200 V
Capacitance @ Vr, F190pF @ 0V, 1MHz
Mounting TypeSurface Mount
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device PackageDPAK
Operating Temperature - Junction-40°C ~ 175°C

Documents and evidence

STPSC2H12B2Y-TR ↗

Before sourcing STPSC2H12B2Y-TR

  1. Identify the firmware and board baseline
  2. Check flash, RAM and required peripherals
  3. Review pin assignment and supply limits
  4. Keep the full temperature and package suffix
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