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STMicroelectronics · Discrete semiconductors

STPSC6H065DLF

DIODE SIL CARB 650V 6A POWERFLAT

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STPSC6H065DLF component illustration
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STPSC6H065DLF specifications

Recorded source facts. Missing values are kept explicit; verify the exact manufacturer document before design approval.

ManufacturerSTMicroelectronics
Ordering codeSTPSC6H065DLF
FamilyDiscrete semiconductors
Package8-PowerVDFN
Product StatusActive
TechnologySiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)650 V
Current - Average Rectified (Io)6A
Voltage - Forward (Vf) (Max) @ If1.55 V @ 6 A
SpeedNo Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)0 ns
Current - Reverse Leakage @ Vr60 µA @ 650 V
Capacitance @ Vr, F350pF @ 0V, 1MHz
Mounting TypeSurface Mount
Package / Case8-PowerVDFN
Supplier Device PackagePowerFlat™ (8x8) HV
Operating Temperature - Junction-40°C ~ 175°C

Documents and evidence

STPSC6H065DLF ↗

Catalog sources

www.ic-components.com · STPSC6H065DLF ↗

Source directory identity match; source detail pending. Specifications remain from existing catalog.

Before sourcing STPSC6H065DLF

  1. Identify the firmware and board baseline
  2. Check flash, RAM and required peripherals
  3. Review pin assignment and supply limits
  4. Keep the full temperature and package suffix
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