STMicroelectronics · Discrete semiconductors
STPSC8065DY
DIODE SIL CARB 650V 8A TO220AC
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STPSC8065DY specifications
Recorded source facts. Missing values are kept explicit; verify the exact manufacturer document before design approval.
| Manufacturer | STMicroelectronics |
|---|---|
| Ordering code | STPSC8065DY |
| Family | Discrete semiconductors |
| Package | TO-220-2 |
| Product Status | Obsolete |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Current - Average Rectified (Io) | 8A |
| Voltage - Forward (Vf) (Max) @ If | 1.45 V @ 8 A |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Current - Reverse Leakage @ Vr | 105 µA @ 650 V |
| Capacitance @ Vr, F | 540pF @ 0V, 1MHz |
| Mounting Type | Through Hole |
| Package / Case | TO-220-2 |
| Supplier Device Package | TO-220AC |
| Operating Temperature - Junction | -40°C ~ 175°C |
Documents and evidence
STPSC8065DY ↗Before sourcing STPSC8065DY
- Identify the firmware and board baseline
- Check flash, RAM and required peripherals
- Review pin assignment and supply limits
- Keep the full temperature and package suffix
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