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STMicroelectronics · Discrete semiconductors

STPSC8H065D

DIODE SIL CARB 650V 8A TO220AC

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STPSC8H065D component illustration
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STPSC8H065D specifications

Recorded source facts. Missing values are kept explicit; verify the exact manufacturer document before design approval.

ManufacturerSTMicroelectronics
Ordering codeSTPSC8H065D
FamilyDiscrete semiconductors
PackageTO-220-2
Product StatusActive
TechnologySiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)650 V
Current - Average Rectified (Io)8A
Voltage - Forward (Vf) (Max) @ If1.75 V @ 8 A
SpeedNo Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)0 ns
Current - Reverse Leakage @ Vr80 µA @ 650 V
Capacitance @ Vr, F414pF @ 0V, 1MHz
Mounting TypeThrough Hole
Package / CaseTO-220-2
Supplier Device PackageTO-220AC
Operating Temperature - Junction-40°C ~ 175°C

Documents and evidence

STPSC8H065D ↗

Catalog sources

www.ic-components.com · STPSC8H065D ↗

Source directory identity match; source detail pending. Specifications remain from existing catalog.

Before sourcing STPSC8H065D

  1. Identify the firmware and board baseline
  2. Check flash, RAM and required peripherals
  3. Review pin assignment and supply limits
  4. Keep the full temperature and package suffix
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