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STMicroelectronics · Discrete semiconductors

STPSC8H065DI

DIODE SIC 650V 8A TO220AC INS

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STPSC8H065DI component illustration
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STPSC8H065DI specifications

Recorded source facts. Missing values are kept explicit; verify the exact manufacturer document before design approval.

ManufacturerSTMicroelectronics
Ordering codeSTPSC8H065DI
FamilyDiscrete semiconductors
PackageTO-220-2 Insulated, TO-220AC
Product StatusActive
TechnologySiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)650 V
Current - Average Rectified (Io)8A
Voltage - Forward (Vf) (Max) @ If1.75 V @ 8 A
SpeedFast Recovery = 200mA (Io)
Reverse Recovery Time (trr)Not provided in source
Current - Reverse Leakage @ Vr80 µA @ 650 V
Capacitance @ Vr, FNot provided in source
Mounting TypeThrough Hole
Package / CaseTO-220-2 Insulated, TO-220AC
Supplier Device PackageTO-220AC ins
Operating Temperature - Junction-40°C ~ 175°C

Documents and evidence

STPSC8H065DI ↗

Catalog sources

www.ic-components.com · STPSC8H065DI ↗

Source directory identity match; source detail pending. Specifications remain from existing catalog.

Before sourcing STPSC8H065DI

  1. Identify the firmware and board baseline
  2. Check flash, RAM and required peripherals
  3. Review pin assignment and supply limits
  4. Keep the full temperature and package suffix
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