STMicroelectronics · Discrete semiconductors
STPSC8H065G-TR
DIODE SIL CARBIDE 650V 8A D2PAK
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STPSC8H065G-TR specifications
Recorded source facts. Missing values are kept explicit; verify the exact manufacturer document before design approval.
| Manufacturer | STMicroelectronics |
|---|---|
| Ordering code | STPSC8H065G-TR |
| Family | Discrete semiconductors |
| Package | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Product Status | Active |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Current - Average Rectified (Io) | 8A |
| Voltage - Forward (Vf) (Max) @ If | 1.75 V @ 8 A |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Current - Reverse Leakage @ Vr | 80 µA @ 650 V |
| Capacitance @ Vr, F | 414pF @ 0V, 1MHz |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package | D²PAK |
| Operating Temperature - Junction | -40°C ~ 175°C |
Documents and evidence
STPSC8H065G-TR ↗Catalog sources
www.ic-components.com · STPSC8H065G-TR ↗Source directory identity match; source detail pending. Specifications remain from existing catalog.
Before sourcing STPSC8H065G-TR
- Identify the firmware and board baseline
- Check flash, RAM and required peripherals
- Review pin assignment and supply limits
- Keep the full temperature and package suffix
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