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STMicroelectronics · Discrete semiconductors

STQ1NK80ZR-AP

MOSFET N-CH 800V 300MA TO92-3

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STQ1NK80ZR-AP component illustration
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STQ1NK80ZR-AP specifications

Recorded source facts. Missing values are kept explicit; verify the exact manufacturer document before design approval.

ManufacturerSTMicroelectronics
Ordering codeSTQ1NK80ZR-AP
FamilyDiscrete semiconductors
PackageTO-226-3, TO-92-3 (TO-226AA) Formed Leads
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)800 V
Current - Continuous Drain (Id) @ 25°C300mA (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs16Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs7.7 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds160 pF @ 25 V
FET FeatureNot provided in source
Power Dissipation (Max)3W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-92-3
Package / CaseTO-226-3, TO-92-3 (TO-226AA) Formed Leads

Documents and evidence

STQ1NK80ZR-AP ↗

Catalog sources

www.ic-components.com · STQ1NK80ZR-AP ↗

Source directory identity match; source detail pending. Specifications remain from existing catalog.

Before sourcing STQ1NK80ZR-AP

  1. Identify the firmware and board baseline
  2. Check flash, RAM and required peripherals
  3. Review pin assignment and supply limits
  4. Keep the full temperature and package suffix
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