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STMicroelectronics · Discrete semiconductors

STR1P2UH7

MOSFET P-CH 20V 1.4A SOT-23

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STR1P2UH7 component illustration
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STR1P2UH7 specifications

Recorded source facts. Missing values are kept explicit; verify the exact manufacturer document before design approval.

ManufacturerSTMicroelectronics
Ordering codeSTR1P2UH7
FamilyDiscrete semiconductors
PackageTO-236-3, SC-59, SOT-23-3
Product StatusObsolete
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20 V
Current - Continuous Drain (Id) @ 25°C1.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Rds On (Max) @ Id, Vgs100mOhm @ 700mA, 4.5V
Vgs(th) (Max) @ Id1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs4.8 nC @ 4.5 V
Vgs (Max)±8V
Input Capacitance (Ciss) (Max) @ Vds510 pF @ 10 V
FET FeatureNot provided in source
Power Dissipation (Max)350mW (Tc)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSOT-23-3
Package / CaseTO-236-3, SC-59, SOT-23-3

Documents and evidence

STR1P2UH7 ↗

Catalog sources

www.ic-components.com · STR1P2UH7 ↗

Source directory identity match; source detail pending. Specifications remain from existing catalog.

Before sourcing STR1P2UH7

  1. Identify the firmware and board baseline
  2. Check flash, RAM and required peripherals
  3. Review pin assignment and supply limits
  4. Keep the full temperature and package suffix
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