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STMicroelectronics · Discrete semiconductors

STS3C2F100

MOSFET N/P-CH 100V 3A 8SOIC

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STS3C2F100 component illustration
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STS3C2F100 specifications

Recorded source facts. Missing values are kept explicit; verify the exact manufacturer document before design approval.

ManufacturerSTMicroelectronics
Ordering codeSTS3C2F100
FamilyDiscrete semiconductors
Package8-SOIC (0.154", 3.90mm Width)
Product StatusObsolete
TechnologyMOSFET (Metal Oxide)
ConfigurationN and P-Channel
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C3A
Rds On (Max) @ Id, Vgs145mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds460pF @ 25V
Power - Max2W
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SOIC

Documents and evidence

STS3C2F100 ↗

Before sourcing STS3C2F100

  1. Identify the firmware and board baseline
  2. Check flash, RAM and required peripherals
  3. Review pin assignment and supply limits
  4. Keep the full temperature and package suffix
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