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STMicroelectronics · Discrete semiconductors

STS3P6F6

MOSFET P-CH 60V 3A 8SOIC

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STS3P6F6 component illustration
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STS3P6F6 specifications

Recorded source facts. Missing values are kept explicit; verify the exact manufacturer document before design approval.

ManufacturerSTMicroelectronics
Ordering codeSTS3P6F6
FamilyDiscrete semiconductors
Package8-SOIC (0.154", 3.90mm Width)
Product StatusObsolete
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60 V
Current - Continuous Drain (Id) @ 25°C3A (Tj)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs160mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs6.4 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds340 pF @ 48 V
FET FeatureNot provided in source
Power Dissipation (Max)2.7W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-SOIC
Package / Case8-SOIC (0.154", 3.90mm Width)

Documents and evidence

STS3P6F6 ↗

Catalog sources

www.ic-components.com · STS3P6F6 ↗

Source directory identity match; source detail pending. Specifications remain from existing catalog.

Before sourcing STS3P6F6

  1. Identify the firmware and board baseline
  2. Check flash, RAM and required peripherals
  3. Review pin assignment and supply limits
  4. Keep the full temperature and package suffix
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Questions about STS3P6F6

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