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STMicroelectronics · Discrete semiconductors

STS4C3F60L

MOSFET N/P-CH 60V 4A/3A 8SOIC

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STS4C3F60L component illustration
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STS4C3F60L specifications

Recorded source facts. Missing values are kept explicit; verify the exact manufacturer document before design approval.

ManufacturerSTMicroelectronics
Ordering codeSTS4C3F60L
FamilyDiscrete semiconductors
Package8-SOIC (0.154", 3.90mm Width)
Product StatusObsolete
TechnologyMOSFET (Metal Oxide)
ConfigurationN and P-Channel
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C4A, 3A
Rds On (Max) @ Id, Vgs55mOhm @ 2A, 10V
Vgs(th) (Max) @ Id1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs20.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds1030pF @ 25V
Power - Max2W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SOIC

Documents and evidence

STS4C3F60L ↗

Before sourcing STS4C3F60L

  1. Identify the firmware and board baseline
  2. Check flash, RAM and required peripherals
  3. Review pin assignment and supply limits
  4. Keep the full temperature and package suffix
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