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STMicroelectronics · Discrete semiconductors

STS4DNFS30

MOSFET N-CH 30V 4.5A 8SO

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STS4DNFS30 component illustration
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STS4DNFS30 specifications

Recorded source facts. Missing values are kept explicit; verify the exact manufacturer document before design approval.

ManufacturerSTMicroelectronics
Ordering codeSTS4DNFS30
FamilyDiscrete semiconductors
Package8-SOIC (0.154", 3.90mm Width)
Product StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30 V
Current - Continuous Drain (Id) @ 25°C4.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)5V, 10V
Rds On (Max) @ Id, Vgs55mOhm @ 2A, 10V
Vgs(th) (Max) @ Id1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs4.7 nC @ 5 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds330 pF @ 25 V
FET FeatureSchottky Diode (Isolated)
Power Dissipation (Max)2W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-SOIC
Package / Case8-SOIC (0.154", 3.90mm Width)

Documents and evidence

STS4DNFS30 ↗

Catalog sources

www.ic-components.com · STS4DNFS30 ↗

Source directory identity match; source detail pending. Specifications remain from existing catalog.

Before sourcing STS4DNFS30

  1. Identify the firmware and board baseline
  2. Check flash, RAM and required peripherals
  3. Review pin assignment and supply limits
  4. Keep the full temperature and package suffix
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