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STMicroelectronics · Discrete semiconductors

STS6P3LLH6

MOSFET P-CH 30V 6A 8SO

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STS6P3LLH6 component illustration
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STS6P3LLH6 specifications

Recorded source facts. Missing values are kept explicit; verify the exact manufacturer document before design approval.

ManufacturerSTMicroelectronics
Ordering codeSTS6P3LLH6
FamilyDiscrete semiconductors
Package8-SOIC (0.154", 3.90mm Width)
Product StatusActive
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30 V
Current - Continuous Drain (Id) @ 25°C6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs30mOhm @ 3A, 10V
Vgs(th) (Max) @ Id1V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs12 nC @ 4.5 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1450 pF @ 24 V
FET FeatureNot provided in source
Power Dissipation (Max)2.7W (Ta)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-SOIC
Package / Case8-SOIC (0.154", 3.90mm Width)

Documents and evidence

STS6P3LLH6 ↗

Catalog sources

www.ic-components.com · STS6P3LLH6 ↗

Source directory identity match; source detail pending. Specifications remain from existing catalog.

Before sourcing STS6P3LLH6

  1. Identify the firmware and board baseline
  2. Check flash, RAM and required peripherals
  3. Review pin assignment and supply limits
  4. Keep the full temperature and package suffix
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