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STMicroelectronics · Discrete semiconductors

STS8C5H30L

MOSFET N/P-CH 30V 8A/5.4A 8SOIC

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STS8C5H30L component illustration
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STS8C5H30L specifications

Recorded source facts. Missing values are kept explicit; verify the exact manufacturer document before design approval.

ManufacturerSTMicroelectronics
Ordering codeSTS8C5H30L
FamilyDiscrete semiconductors
Package8-SOIC (0.154", 3.90mm Width)
Product StatusObsolete
TechnologyMOSFET (Metal Oxide)
ConfigurationN and P-Channel
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C8A, 5.4A
Rds On (Max) @ Id, Vgs22mOhm @ 4A, 10V
Vgs(th) (Max) @ Id1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs10nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds857pF @ 25V
Power - Max2W
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SOIC

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Before sourcing STS8C5H30L

  1. Identify the firmware and board baseline
  2. Check flash, RAM and required peripherals
  3. Review pin assignment and supply limits
  4. Keep the full temperature and package suffix
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