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STMicroelectronics · Discrete semiconductors

STS8DN3LLH5

MOSFET 2N-CH 30V 10A 8SO

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STS8DN3LLH5 component illustration
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STS8DN3LLH5 specifications

Recorded source facts. Missing values are kept explicit; verify the exact manufacturer document before design approval.

ManufacturerSTMicroelectronics
Ordering codeSTS8DN3LLH5
FamilyDiscrete semiconductors
Package8-SOIC (0.154", 3.90mm Width)
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Configuration2 N-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C10A
Rds On (Max) @ Id, Vgs19mOhm @ 5A, 10V
Vgs(th) (Max) @ Id1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs5.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds724pF @ 25V
Power - Max2.7W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SOIC

Documents and evidence

STS8DN3LLH5 ↗

Catalog sources

www.ic-components.com · STS8DN3LLH5 ↗

Source directory identity match; source detail pending. Specifications remain from existing catalog.

Before sourcing STS8DN3LLH5

  1. Identify the firmware and board baseline
  2. Check flash, RAM and required peripherals
  3. Review pin assignment and supply limits
  4. Keep the full temperature and package suffix
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