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STMicroelectronics · Discrete semiconductors

STS8DN6LF6AG

MOSFET 2 N-CHANNEL 60V 8A 8SO

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STS8DN6LF6AG component illustration
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STS8DN6LF6AG specifications

Recorded source facts. Missing values are kept explicit; verify the exact manufacturer document before design approval.

ManufacturerSTMicroelectronics
Ordering codeSTS8DN6LF6AG
FamilyDiscrete semiconductors
Package8-SOIC (0.154", 3.90mm Width)
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Configuration2 N-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C8A (Ta)
Rds On (Max) @ Id, Vgs24mOhm @ 4A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs27nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds1340pF @ 25V
Power - Max3.2W
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SO

Documents and evidence

STS8DN6LF6AG ↗

Catalog sources

www.ic-components.com · STS8DN6LF6AG ↗

Source directory identity match; source detail pending. Specifications remain from existing catalog.

Before sourcing STS8DN6LF6AG

  1. Identify the firmware and board baseline
  2. Check flash, RAM and required peripherals
  3. Review pin assignment and supply limits
  4. Keep the full temperature and package suffix
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