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STMicroelectronics · Discrete semiconductors

STS9P2UH7

MOSFET P-CH 20V 9A 8SO

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STS9P2UH7 component illustration
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STS9P2UH7 specifications

Recorded source facts. Missing values are kept explicit; verify the exact manufacturer document before design approval.

ManufacturerSTMicroelectronics
Ordering codeSTS9P2UH7
FamilyDiscrete semiconductors
Package8-SOIC (0.154", 3.90mm Width)
Product StatusObsolete
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20 V
Current - Continuous Drain (Id) @ 25°C9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)1.5V, 4.5V
Rds On (Max) @ Id, Vgs22.5mOhm @ 4.5A, 4.5V
Vgs(th) (Max) @ Id1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs22 nC @ 4.5 V
Vgs (Max)±8V
Input Capacitance (Ciss) (Max) @ Vds2390 pF @ 16 V
FET FeatureNot provided in source
Power Dissipation (Max)2.7W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-SOIC
Package / Case8-SOIC (0.154", 3.90mm Width)

Documents and evidence

STS9P2UH7 ↗

Catalog sources

www.ic-components.com · STS9P2UH7 ↗

Source directory identity match; source detail pending. Specifications remain from existing catalog.

Before sourcing STS9P2UH7

  1. Identify the firmware and board baseline
  2. Check flash, RAM and required peripherals
  3. Review pin assignment and supply limits
  4. Keep the full temperature and package suffix
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