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STMicroelectronics · Discrete semiconductors

STSJ100NHS3LL

MOSFET N-CH 30V 100A 8SOIC

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STSJ100NHS3LL component illustration
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STSJ100NHS3LL specifications

Recorded source facts. Missing values are kept explicit; verify the exact manufacturer document before design approval.

ManufacturerSTMicroelectronics
Ordering codeSTSJ100NHS3LL
FamilyDiscrete semiconductors
Package8-SOIC (0.154", 3.90mm Width) Exposed Pad
Product StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30 V
Current - Continuous Drain (Id) @ 25°C100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs4.2mOhm @ 10A, 10V
Vgs(th) (Max) @ Id2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs35 nC @ 4.5 V
Vgs (Max)±16V
Input Capacitance (Ciss) (Max) @ Vds4200 pF @ 25 V
FET FeatureNot provided in source
Power Dissipation (Max)3W (Ta), 70W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-SOIC-EP
Package / Case8-SOIC (0.154", 3.90mm Width) Exposed Pad

Documents and evidence

STSJ100NHS3LL ↗

Catalog sources

www.ic-components.com · STSJ100NHS3LL ↗

Source directory identity match; source detail pending. Specifications remain from existing catalog.

Before sourcing STSJ100NHS3LL

  1. Identify the firmware and board baseline
  2. Check flash, RAM and required peripherals
  3. Review pin assignment and supply limits
  4. Keep the full temperature and package suffix
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