STMicroelectronics · Discrete semiconductors
STTH810DI
DIODE GEN PURP 1KV 8A TO220Ins
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STTH810DI specifications
Recorded source facts. Missing values are kept explicit; verify the exact manufacturer document before design approval.
| Manufacturer | STMicroelectronics |
|---|---|
| Ordering code | STTH810DI |
| Family | Discrete semiconductors |
| Package | TO-220-2 |
| Product Status | Active |
| Technology | Standard |
| Voltage - DC Reverse (Vr) (Max) | 1000 V |
| Current - Average Rectified (Io) | 8A |
| Voltage - Forward (Vf) (Max) @ If | 2 V @ 8 A |
| Speed | Fast Recovery = 200mA (Io) |
| Reverse Recovery Time (trr) | 85 ns |
| Current - Reverse Leakage @ Vr | 5 µA @ 1000 V |
| Capacitance @ Vr, F | Not provided in source |
| Mounting Type | Through Hole |
| Package / Case | TO-220-2 |
| Supplier Device Package | TO-220Ins |
| Operating Temperature - Junction | 175°C (Max) |
Documents and evidence
STTH810DI ↗Before sourcing STTH810DI
- Identify the firmware and board baseline
- Check flash, RAM and required peripherals
- Review pin assignment and supply limits
- Keep the full temperature and package suffix
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