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STMicroelectronics · Discrete semiconductors

STU10N60M2

MOSFET N-CH 600V 7.5A IPAK

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STU10N60M2 component illustration
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STU10N60M2 specifications

Recorded source facts. Missing values are kept explicit; verify the exact manufacturer document before design approval.

ManufacturerSTMicroelectronics
Ordering codeSTU10N60M2
FamilyDiscrete semiconductors
PackageTO-251-3 Short Leads, IPak, TO-251AA
Product StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600 V
Current - Continuous Drain (Id) @ 25°C7.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs600mOhm @ 3A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs13.5 nC @ 10 V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds400 pF @ 100 V
FET FeatureNot provided in source
Power Dissipation (Max)85W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-251 (IPAK)
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA

Documents and evidence

STU10N60M2 ↗

Catalog sources

www.ic-components.com · STU10N60M2 ↗

Source directory identity match; source detail pending. Specifications remain from existing catalog.

Before sourcing STU10N60M2

  1. Identify the firmware and board baseline
  2. Check flash, RAM and required peripherals
  3. Review pin assignment and supply limits
  4. Keep the full temperature and package suffix
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