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STMicroelectronics · Discrete semiconductors

STU11NM60ND

MOSFET N-CH 600V 10A IPAK

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STU11NM60ND component illustration
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STU11NM60ND specifications

Recorded source facts. Missing values are kept explicit; verify the exact manufacturer document before design approval.

ManufacturerSTMicroelectronics
Ordering codeSTU11NM60ND
FamilyDiscrete semiconductors
PackageTO-251-3 Short Leads, IPak, TO-251AA
Product StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600 V
Current - Continuous Drain (Id) @ 25°C10A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs450mOhm @ 5A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs30 nC @ 10 V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds850 pF @ 50 V
FET FeatureNot provided in source
Power Dissipation (Max)90W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI-PAK
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA

Documents and evidence

STU11NM60ND ↗

Before sourcing STU11NM60ND

  1. Identify the firmware and board baseline
  2. Check flash, RAM and required peripherals
  3. Review pin assignment and supply limits
  4. Keep the full temperature and package suffix
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