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STMicroelectronics · Discrete semiconductors

STU2LN60K3

MOSFET N CH 600V 2A IPAK

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STU2LN60K3 component illustration
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STU2LN60K3 specifications

Recorded source facts. Missing values are kept explicit; verify the exact manufacturer document before design approval.

ManufacturerSTMicroelectronics
Ordering codeSTU2LN60K3
FamilyDiscrete semiconductors
PackageTO-251-3 Short Leads, IPak, TO-251AA
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600 V
Current - Continuous Drain (Id) @ 25°C2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs4.5Ohm @ 1A, 10V
Vgs(th) (Max) @ Id4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs12 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds235 pF @ 50 V
FET FeatureNot provided in source
Power Dissipation (Max)45W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-251 (IPAK)
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA

Documents and evidence

STU2LN60K3 ↗

Catalog sources

www.ic-components.com · STU2LN60K3 ↗

Source directory identity match; source detail pending. Specifications remain from existing catalog.

Before sourcing STU2LN60K3

  1. Identify the firmware and board baseline
  2. Check flash, RAM and required peripherals
  3. Review pin assignment and supply limits
  4. Keep the full temperature and package suffix
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