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STMicroelectronics · Discrete semiconductors

STU3N65M6

MOSFET N-CH 650V 3.5A IPAK

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STU3N65M6 component illustration
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STU3N65M6 specifications

Recorded source facts. Missing values are kept explicit; verify the exact manufacturer document before design approval.

ManufacturerSTMicroelectronics
Ordering codeSTU3N65M6
FamilyDiscrete semiconductors
PackageTO-251-3 Short Leads, IPak, TO-251AA
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25°C3.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs1.5Ohm @ 1.75A, 10V
Vgs(th) (Max) @ Id3.75V @ 250µA
Gate Charge (Qg) (Max) @ Vgs6 nC @ 10 V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds150 pF @ 100 V
FET FeatureNot provided in source
Power Dissipation (Max)45W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI-PAK
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA

Documents and evidence

STU3N65M6 ↗

Before sourcing STU3N65M6

  1. Identify the firmware and board baseline
  2. Check flash, RAM and required peripherals
  3. Review pin assignment and supply limits
  4. Keep the full temperature and package suffix
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