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STMicroelectronics · Discrete semiconductors

STU8NM50N

MOSFET N-CH 500V 5A IPAK

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STU8NM50N component illustration
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STU8NM50N specifications

Recorded source facts. Missing values are kept explicit; verify the exact manufacturer document before design approval.

ManufacturerSTMicroelectronics
Ordering codeSTU8NM50N
FamilyDiscrete semiconductors
PackageTO-251-3 Short Leads, IPak, TO-251AA
Product StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)500 V
Current - Continuous Drain (Id) @ 25°C5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs790mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs14 nC @ 10 V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds364 pF @ 50 V
FET FeatureNot provided in source
Power Dissipation (Max)45W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI-PAK
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA

Documents and evidence

STU8NM50N ↗

Before sourcing STU8NM50N

  1. Identify the firmware and board baseline
  2. Check flash, RAM and required peripherals
  3. Review pin assignment and supply limits
  4. Keep the full temperature and package suffix
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