STMicroelectronics · Discrete semiconductors
STV200N55F3
MOSFET N-CH 55V 200A 10POWERSO
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STV200N55F3 specifications
Recorded source facts. Missing values are kept explicit; verify the exact manufacturer document before design approval.
| Manufacturer | STMicroelectronics |
|---|---|
| Ordering code | STV200N55F3 |
| Family | Discrete semiconductors |
| Package | PowerSO-10 Exposed Bottom Pad |
| Product Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 55 V |
| Current - Continuous Drain (Id) @ 25°C | 200A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 2.5mOhm @ 75A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 100 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 6800 pF @ 25 V |
| FET Feature | Not provided in source |
| Power Dissipation (Max) | 300W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 10-PowerSO |
| Package / Case | PowerSO-10 Exposed Bottom Pad |
Documents and evidence
STV200N55F3 ↗Catalog sources
www.ic-components.com · STV200N55F3 ↗Source directory identity match; source detail pending. Specifications remain from existing catalog.
Before sourcing STV200N55F3
- Identify the firmware and board baseline
- Check flash, RAM and required peripherals
- Review pin assignment and supply limits
- Keep the full temperature and package suffix
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