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STMicroelectronics · Discrete semiconductors

STW18NK80Z

MOSFET N-CH 800V 19A TO247-3

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STW18NK80Z component illustration
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STW18NK80Z specifications

Recorded source facts. Missing values are kept explicit; verify the exact manufacturer document before design approval.

ManufacturerSTMicroelectronics
Ordering codeSTW18NK80Z
FamilyDiscrete semiconductors
PackageTO-247-3
Product StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)800 V
Current - Continuous Drain (Id) @ 25°C19A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs380mOhm @ 10A, 10V
Vgs(th) (Max) @ Id4.5V @ 150µA
Gate Charge (Qg) (Max) @ Vgs250 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds6100 pF @ 25 V
FET FeatureNot provided in source
Power Dissipation (Max)350W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247-3
Package / CaseTO-247-3

Documents and evidence

STW18NK80Z ↗

Catalog sources

www.ic-components.com · STW18NK80Z ↗

Source directory identity match; source detail pending. Specifications remain from existing catalog.

Before sourcing STW18NK80Z

  1. Identify the firmware and board baseline
  2. Check flash, RAM and required peripherals
  3. Review pin assignment and supply limits
  4. Keep the full temperature and package suffix
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