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STMicroelectronics · Discrete semiconductors

STW20NM50

MOSFET N-CH 550V 20A TO247-3

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STW20NM50 component illustration
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STW20NM50 specifications

Recorded source facts. Missing values are kept explicit; verify the exact manufacturer document before design approval.

ManufacturerSTMicroelectronics
Ordering codeSTW20NM50
FamilyDiscrete semiconductors
PackageTO-247-3
Product StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)550 V
Current - Continuous Drain (Id) @ 25°C20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs250mOhm @ 10A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs56 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds1480 pF @ 25 V
FET FeatureNot provided in source
Power Dissipation (Max)214W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247-3
Package / CaseTO-247-3

Documents and evidence

STW20NM50 ↗

Before sourcing STW20NM50

  1. Identify the firmware and board baseline
  2. Check flash, RAM and required peripherals
  3. Review pin assignment and supply limits
  4. Keep the full temperature and package suffix
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