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STMicroelectronics · Discrete semiconductors

STW28N60M2

MOSFET N-CH 600V 24A TO247

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STW28N60M2 component illustration
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STW28N60M2 specifications

Recorded source facts. Missing values are kept explicit; verify the exact manufacturer document before design approval.

ManufacturerSTMicroelectronics
Ordering codeSTW28N60M2
FamilyDiscrete semiconductors
PackageTO-247-3
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600 V
Current - Continuous Drain (Id) @ 25°C24A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs150mOhm @ 12A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs37 nC @ 10 V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds1370 pF @ 100 V
FET FeatureNot provided in source
Power Dissipation (Max)170W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247-3
Package / CaseTO-247-3

Documents and evidence

STW28N60M2 ↗

Catalog sources

www.ic-components.com · STW28N60M2 ↗

Source directory identity match; source detail pending. Specifications remain from existing catalog.

Before sourcing STW28N60M2

  1. Identify the firmware and board baseline
  2. Check flash, RAM and required peripherals
  3. Review pin assignment and supply limits
  4. Keep the full temperature and package suffix
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