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STMicroelectronics · Discrete semiconductors

STW47NM60ND

MOSFET N-CH 600V 35A TO247

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STW47NM60ND component illustration
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STW47NM60ND specifications

Recorded source facts. Missing values are kept explicit; verify the exact manufacturer document before design approval.

ManufacturerSTMicroelectronics
Ordering codeSTW47NM60ND
FamilyDiscrete semiconductors
PackageTO-247-3
Product StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600 V
Current - Continuous Drain (Id) @ 25°C35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs88mOhm @ 17.5A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs120 nC @ 10 V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds4200 pF @ 50 V
FET FeatureNot provided in source
Power Dissipation (Max)255W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247-3
Package / CaseTO-247-3

Documents and evidence

STW47NM60ND ↗

Catalog sources

www.ic-components.com · STW47NM60ND ↗

Source directory identity match; source detail pending. Specifications remain from existing catalog.

Before sourcing STW47NM60ND

  1. Identify the firmware and board baseline
  2. Check flash, RAM and required peripherals
  3. Review pin assignment and supply limits
  4. Keep the full temperature and package suffix
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