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STMicroelectronics · Discrete semiconductors

STW9N80K5

MOSFET N-CHANNEL 800V 7A TO247

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STW9N80K5 component illustration
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STW9N80K5 specifications

Recorded source facts. Missing values are kept explicit; verify the exact manufacturer document before design approval.

ManufacturerSTMicroelectronics
Ordering codeSTW9N80K5
FamilyDiscrete semiconductors
PackageTO-247-3
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)800 V
Current - Continuous Drain (Id) @ 25°C7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs900mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs12 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds340 pF @ 100 V
FET FeatureNot provided in source
Power Dissipation (Max)110W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247-3
Package / CaseTO-247-3

Documents and evidence

STW9N80K5 ↗

Before sourcing STW9N80K5

  1. Identify the firmware and board baseline
  2. Check flash, RAM and required peripherals
  3. Review pin assignment and supply limits
  4. Keep the full temperature and package suffix
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